4N60 MOSFET — Specifications & Equivalents

MOSFET N -Channel - 4N60

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)600 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)4 A
Drain-Source On-Resistance (Rds)2.2
Rise Time (tr)80 nS
Output Capacitance (Coss)80 pF
Junction Temperature (Tj)150 °C
PackageTO-263 TO-262 TO-251 TO-252 TO-220 TO-220F DFN-8
Power Dissipation (Pd)106 W

Equivalent & Replacement Parts

No verified equivalents are listed for 4N60 yet.

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