2N7002-7 Transistor — Specifications & Equivalents
2N7002-7 Transistor Datasheet, 2N7002-7 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.37 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.17 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 11 pF |
| Package | SOT-23 |
| 2N7002N-channel enhancement mode field-effect transistorRev. 03 27 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability | 2N7002 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.3. |
| MOSFET2N7002-G (N-Channel)RoHS DeviceFeaturesSOT-23 Power dissipation | 0.35W0.119(3.00)0.110(2.80)DEquivalent Circuit0.056(1.40)0.047(1.20)DG S0.083(2.10)G : Gate 0.066(1.70)0.006(0.15)S : Source 0.002(0.05)GD : Drain0.044(1.10)0.103(2.60)0.035(0.90)0.086(2.20)S0.006(0.15)max0.020(0.50)Maximum Ratings (at TA=25C)0.013(0.35)Symbol 0.00 |