2N7002C1D Transistor — Specifications & Equivalents
2N7002C1D Transistor Datasheet, 2N7002C1D Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.35 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 40 V |
| |Id| ⓘ - Maximum Drain Current | 0.115 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 25 pF |
| Package | SOT-23 |