2N7002DSGP Transistor — Specifications & Equivalents
2N7002DSGP Transistor Datasheet, 2N7002DSGP Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.96 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 50 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.51 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 13 pF |
| Package | SOT-457 |
| October 20072N7002DWN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantSC70-6 (SOT363)11Marking | 2NAbsolute Maximum Ratings * Ta = 25C un |