2N65M Transistor — Specifications & Equivalents
2N65M Transistor Datasheet, 2N65M Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 34 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 650 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 2 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 45 pF |
| Package | TO252 |
| STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1 | Internal schematic diagram Applicatio |