2N65M Transistor — Specifications & Equivalents

2N65M Transistor Datasheet, 2N65M Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation34 W
|Vds|ⓘ - Maximum Drain-Source Voltage650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current2 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance45 pF
PackageTO252
STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1Internal schematic diagram Applicatio

Equivalent & Replacement Parts

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