24NM60L-TQ2-R MOSFET — Specifications & Equivalents

About the 24NM60L-TQ2-R

The 24NM60L-TQ2-R is a MOSFET with a drain–source voltage (VDS) rating of 600 V and a continuous drain current (ID) of 24 A. It can dissipate up to 176 W and is rated to a junction temperature of 150 °C. It is supplied in the TO-263 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 600 V
  • Max continuous drain current (ID): 24 A
  • Power dissipation (PD): 176 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO-263

Typical applications

With its 600 V drain–source rating the 24NM60L-TQ2-R sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 1100 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 24NM60L-TQ2-R

A drop-in substitute for the 24NM60L-TQ2-R should match its polarity and offer a drain–source rating of at least 600 V and a continuous drain current rating of at least 24 A.

Mechanically, check the replacement against the TO-263 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 24NM60L-TQ2-R?

The 24NM60L-TQ2-R is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 24 A continuous drain current.

What is the maximum voltage of the 24NM60L-TQ2-R?

The 24NM60L-TQ2-R has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 24NM60L-TQ2-R handle?

It is rated for 24 A of continuous drain current, with power dissipation limited to 176 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 24NM60L-TQ2-R come in?

It is listed in TO-263. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 24NM60L-TQ2-R?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation176 W
|Vds|ⓘ - Maximum Drain-Source Voltage600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current24 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance1100 pF
PackageTO-263

Equivalent & Replacement Parts

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