24N50A Transistor — Specifications & Equivalents

24N50A Transistor Datasheet, 24N50A Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation300 W
|Vds|ⓘ - Maximum Drain-Source Voltage500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current24 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance450 pF
PackageLCC
FIR24N50APTGHigh Voltage N-Channel MOSFETPIN Connection TO-3PFeatures Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge90 nC (Typ.) gSchematic dia ram BVDSS=500V,ID=24A D Lower RDS(on) : 0.2 (Max) @VG=10V G 100% Avalanche Tested S Marking DiagramY = YearA = Assembly Location

Equivalent & Replacement Parts

Browse all electronic components