24N50A Transistor — Specifications & Equivalents
24N50A Transistor Datasheet, 24N50A Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 300 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 24 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 450 pF |
| Package | LCC |
| FIR24N50APTGHigh Voltage N-Channel MOSFETPIN Connection TO-3PFeatures Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge | 90 nC (Typ.) gSchematic dia ram BVDSS=500V,ID=24A D Lower RDS(on) : 0.2 (Max) @VG=10V G 100% Avalanche Tested S Marking DiagramY = YearA = Assembly Location |