23N50D MOSFET — Specifications & Equivalents
About the 23N50D
The 23N50D is a MOSFET with a drain–source voltage (VDS) rating of 500 V and a continuous drain current (ID) of 23 A. It can dissipate up to 260 W and is rated to a junction temperature of 150 °C. It is available in TO3P and TO3PN packages, so confirm the pinout of the exact variant you order.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 500 V
- Max continuous drain current (ID): 23 A
- Power dissipation (PD): 260 W
- Max junction temperature (TJ): 150 °C
- Package: TO3P, TO3PN
Typical applications
With its 500 V drain–source rating the 23N50D sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 277 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 23N50D
A drop-in substitute for the 23N50D should match its polarity and offer a drain–source rating of at least 500 V and a continuous drain current rating of at least 23 A.
Mechanically, check the replacement against the TO3P and TO3PN footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 23N50D?
The 23N50D is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 23 A continuous drain current.
What is the maximum voltage of the 23N50D?
The 23N50D has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 23N50D handle?
It is rated for 23 A of continuous drain current, with power dissipation limited to 260 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 23N50D come in?
It is listed in TO3P and TO3PN. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 23N50D?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 260 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 23 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 277 pF |
| Package | TO3P TO3PN |
| isc N-Channel MOSFET Transistor MDQ23N50DTPFEATURESDrain Current | I = 23A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.245(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so |