Question 1

What is 23N50?

Accepted Answer

23N50 Transistor Datasheet, 23N50 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 23N50?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 315 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 23 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Package: TO-247, isc N-Channel MOSFET Transistor 23N50FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.245(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Question 3

What are equivalent components to 23N50?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

23N50 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	315 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	500 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	23 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Package	TO-247
isc N-Channel MOSFET Transistor 23N50FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-	V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.245(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose