2310 MOSFET — Specifications & Equivalents

About the 2310

The 2310 is a MOSFET with a drain–source voltage (VDS) rating of 60 V and a continuous drain current (ID) of 3 A. It can dissipate up to 0.35 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT23 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 60 V
  • Max continuous drain current (ID): 3 A
  • Power dissipation (PD): 0.35 W
  • Max junction temperature (TJ): 150 °C
  • Package: SOT23

Typical applications

With its 60 V drain–source rating the 2310 sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 34 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 2310

A drop-in substitute for the 2310 should match its polarity and offer a drain–source rating of at least 60 V and a continuous drain current rating of at least 3 A.

Mechanically, check the replacement against the SOT23 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2310?

The 2310 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 3 A continuous drain current.

What is the maximum voltage of the 2310?

The 2310 has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 2310 handle?

It is rated for 3 A of continuous drain current, with power dissipation limited to 0.35 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 2310 come in?

It is listed in SOT23. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2310?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current3 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance34 pF
PackageSOT23
2310 MOSFET(N-Channel)SOT-23 V(BR)DSS RDS(ON)MAX ID105m@10VSOT-23 Plastic-Encapsulate MOSFET60V 3A125m@4.5V FeaturesSOT-23 TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter. Mechanical DataSOT-23 SOT-23 Small Outline Plastic Package. UL Epoxy
ST2310HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS3APPLICATIONS2 HORIZONTAL DEFLECTION FOR1MONITORS 15" AND HIGH END TVSISOWATT218DESCRIPTION The device is manu
ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi

Equivalent & Replacement Parts

Browse all electronic components