2304 MOSFET — Specifications & Equivalents
About the 2304
The 2304 is a MOSFET with a drain–source voltage (VDS) rating of 30 V and a continuous drain current (ID) of 3.3 A. It can dissipate up to 0.35 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT-23 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 30 V
- Max continuous drain current (ID): 3.3 A
- Power dissipation (PD): 0.35 W
- Max junction temperature (TJ): 150 °C
- Package: SOT-23
Typical applications
With its 30 V drain–source rating the 2304 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 45 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 2304
A drop-in substitute for the 2304 should match its polarity and offer a drain–source rating of at least 30 V and a continuous drain current rating of at least 3.3 A.
Mechanically, check the replacement against the SOT-23 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2304?
The 2304 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 3.3 A continuous drain current.
What is the maximum voltage of the 2304?
The 2304 has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 2304 handle?
It is rated for 3.3 A of continuous drain current, with power dissipation limited to 0.35 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 2304 come in?
It is listed in SOT-23. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2304?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.35 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 30 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 3.3 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 45 pF |
| Package | SOT-23 |
| SI2304DSN-channel enhancement mode field-effect transistorRev. 01 17 August 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technologyProduct availability | SI2304DS in SOT23.2. Features TrenchMOS technology Very fast switching Subminiature surface mount package.3. Applications Batte |