2301P Transistor — Specifications & Equivalents
2301P Transistor Datasheet, 2301P Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.84 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 20 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 12 V |
| |Id| ⓘ - Maximum Drain Current | 2.8 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 68 pF |
| Package | SOT23 |
| Analog Power AM2301PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features | rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)130 @ VGS = -4.5V -2.6 Low thermal impedance -20190 @ VGS = -2.5V -2.2 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE |