20N70KL-TF2-T Transistor — Specifications & Equivalents
20N70KL-TF2-T Transistor Datasheet, 20N70KL-TF2-T Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 40 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 700 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 10 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 220 pF |
| Package | TO-220F |
| MCP20N70Features Halogen Free. Green Device (Note 1) Very Low FOM RDS(on)QgN-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Field Effect TransistorMaximum Ratings Operating Junction Temperature Range | -55C to +150CTO-220AB(H) Storage Temperature Range: -55C to +150C Thermal Resistance: |