20N70KG-TF2-T Transistor — Specifications & Equivalents

20N70KG-TF2-T Transistor Datasheet, 20N70KG-TF2-T Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation40 W
|Vds|ⓘ - Maximum Drain-Source Voltage700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current10 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance220 pF
PackageTO-220F
MCP20N70Features Halogen Free. Green Device (Note 1) Very Low FOM RDS(on)QgN-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Field Effect TransistorMaximum Ratings Operating Junction Temperature Range-55C to +150CTO-220AB(H) Storage Temperature Range: -55C to +150C Thermal Resistance:

Equivalent & Replacement Parts

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