20N65D MOSFET — Specifications & Equivalents

About the 20N65D

The 20N65D is a MOSFET with a drain–source voltage (VDS) rating of 650 V and a continuous drain current (ID) of 20 A. It can dissipate up to 260 W and is rated to a junction temperature of 150 °C. It is available in TO3P and TO3PN packages, so confirm the pinout of the exact variant you order.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 650 V
  • Max continuous drain current (ID): 20 A
  • Power dissipation (PD): 260 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO3P, TO3PN

Typical applications

With its 650 V drain–source rating the 20N65D sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 316 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 20N65D

A drop-in substitute for the 20N65D should match its polarity and offer a drain–source rating of at least 650 V and a continuous drain current rating of at least 20 A.

Mechanically, check the replacement against the TO3P and TO3PN footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 20N65D?

The 20N65D is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 650 V drain-source and 20 A continuous drain current.

What is the maximum voltage of the 20N65D?

The 20N65D has a maximum drain-source voltage (Vds) of 650 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 20N65D handle?

It is rated for 20 A of continuous drain current, with power dissipation limited to 260 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 20N65D come in?

It is listed in TO3P and TO3PN. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 20N65D?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation260 W
|Vds|ⓘ - Maximum Drain-Source Voltage650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current20 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance316 pF
PackageTO3P TO3PN

Equivalent & Replacement Parts

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