20N50B Transistor — Specifications & Equivalents
20N50B Transistor Datasheet, 20N50B Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 280 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 20 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 355 pF |
| Package | TO-3PB |
| MPVX20N50B SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSl BVDSS | 500V, ID=20A l Switch Mode Power Supply (SMPS)l RDS(on) : 0.3(Max) @VGS=10Vl Uninterruptible Power Supply (UPS)l Very Low FOM (RDS(on) *Qg)l Power Factor Correction (PFC)l Excellent stability and uniformityl AC to DC ConvertersDGSTO-220F TO-220 TO-247TO-3POrdering InformationType NO. Mar |