Question 1

What is 1N60L-AB3-R?

Accepted Answer

1N60L-AB3-R Transistor Datasheet, 1N60L-AB3-R Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 1N60L-AB3-R?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 8 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 1 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 17.5 pF, Package: SOT-89

Question 3

What are equivalent components to 1N60L-AB3-R?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

1N60L-AB3-R Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	8 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	600 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	1 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	17.5 pF
Package	SOT-89