19MT050XFAPBF MOSFET — Specifications & Equivalents

About the 19MT050XFAPBF

The 19MT050XFAPBF is a MOSFET with a drain–source voltage (VDS) rating of 500 V and a continuous drain current (ID) of 31 A. It can dissipate up to 1140 W and is rated to a junction temperature of 150 °C. It is supplied in the MTP package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 500 V
  • Max continuous drain current (ID): 31 A
  • Power dissipation (PD): 1140 W
  • Max junction temperature (TJ): 150 °C
  • Package: MTP

Typical applications

With its 500 V drain–source rating the 19MT050XFAPBF sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 1165 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 19MT050XFAPBF

A drop-in substitute for the 19MT050XFAPBF should match its polarity and offer a drain–source rating of at least 500 V and a continuous drain current rating of at least 31 A.

Mechanically, check the replacement against the MTP footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 19MT050XFAPBF?

The 19MT050XFAPBF is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 31 A continuous drain current.

What is the maximum voltage of the 19MT050XFAPBF?

The 19MT050XFAPBF has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 19MT050XFAPBF handle?

It is rated for 31 A of continuous drain current, with power dissipation limited to 1140 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 19MT050XFAPBF come in?

It is listed in MTP. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 19MT050XFAPBF?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation1140 W
|Vds|ⓘ - Maximum Drain-Source Voltage500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current31 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance1165 pF
PackageMTP

Equivalent & Replacement Parts

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