Question 1

What is 12N10G-S08-R?

Accepted Answer

12N10G-S08-R Transistor Datasheet, 12N10G-S08-R Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 12N10G-S08-R?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 5 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 6 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 90 pF, Package: SOP-8

Question 3

What are equivalent components to 12N10G-S08-R?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

12N10G-S08-R Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	5 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	100 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	6 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	90 pF
Package	SOP-8