Question 1

What is 10N80L-T3P-T?

Accepted Answer

10N80L-T3P-T Transistor Datasheet, 10N80L-T3P-T Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 10N80L-T3P-T?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 240 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 10 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 180 pF, Package: TO-3P, N-CHANNEL POWER MOSFET SSH10N80AFEATURESBVDSS = 800V Avalanche Rugged TechnologyRDS(ON) = 0.95 Rugged Gate Oxide TechnologyID = 10A Lower Input Capacitance Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 25A (Max.) @ VDS = 800V Lower RDS(ON): 0.746 (Typ.)1231. Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RAT

Question 3

What are equivalent components to 10N80L-T3P-T?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

10N80L-T3P-T Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	240 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	800 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	10 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	180 pF
Package	TO-3P
N-CHANNEL POWER MOSFET SSH10N80AFEATURESBVDSS = 800V Avalanche Rugged TechnologyRDS(ON) = 0.95 Rugged Gate Oxide TechnologyID = 10A Lower Input Capacitance Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current	25A (Max.) @ VDS = 800V Lower RDS(ON): 0.746 (Typ.)1231. Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RAT