10N60G-TA3-T MOSFET — Specifications & Equivalents
About the 10N60G-TA3-T
The 10N60G-TA3-T is a MOSFET with a drain–source voltage (VDS) rating of 600 V and a continuous drain current (ID) of 10 A. It can dissipate up to 156 W and is rated to a junction temperature of 150 °C. It is supplied in the TO-220 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 600 V
- Max continuous drain current (ID): 10 A
- Power dissipation (PD): 156 W
- Max junction temperature (TJ): 150 °C
- Package: TO-220
Typical applications
With its 600 V drain–source rating the 10N60G-TA3-T sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 166 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 10N60G-TA3-T
A drop-in substitute for the 10N60G-TA3-T should match its polarity and offer a drain–source rating of at least 600 V and a continuous drain current rating of at least 10 A.
Mechanically, check the replacement against the TO-220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 10N60G-TA3-T?
The 10N60G-TA3-T is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 10 A continuous drain current.
What is the maximum voltage of the 10N60G-TA3-T?
The 10N60G-TA3-T has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 10N60G-TA3-T handle?
It is rated for 10 A of continuous drain current, with power dissipation limited to 156 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 10N60G-TA3-T come in?
It is listed in TO-220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 10N60G-TA3-T?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 156 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 600 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 10 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 166 pF |
| Package | TO-220 |
| CHENMKO ENTERPRISE CO.,LTDT10N60GPSURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 AmpereAPPLICATION* General purpose applications.* Other switching applications.TO-220FEATURE* Package. (TO-220)* DC Current Gain Specified to Ic=10A( ).187 4.7( ).148 3.8( ).153 3.9* High Current Gain-Bandwidth Product | fT=2MHz (Min.) .413 10.5( ).108( ) |