WPT2N32 Transistor — Specifications & Equivalents
WPT2N32 Transistor Datasheet pdf, WPT2N32 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 1.1 W |
| Maximum Collector-Base Voltage |Vcb| | 30 V |
| Maximum Collector-Emitter Voltage |Vce| | 30 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 100 |
| Noise Figure, dB | - |
| Package | DFN2X2-6L |
| WPT2N32 WPT2N32 Single, PNP, -30V, -1A, Power Transistor with Http// | 20V N-MOSFET Descriptions The WPT2N32 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. DFN2x2-6L Standard Product WPT2N32 is Pb-free. C 6 1 E C B G 5 2 DFeatures D3 S 4 Ultra low collec |
| WPT2N41 WPT2N41 Single, PNP, -30V, -3A, Power Transistor Http | // Descriptions The WPT2N41 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and power management. Standard Product WPT2N41 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter saturation volta |