13001-0 Transistor — Specifications & Equivalents
13001-0 Transistor Datasheet pdf, 13001-0 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.8 W |
| Maximum Collector-Base Voltage |Vcb| | 700 V |
| Maximum Collector-Emitter Voltage |Vce| | 400 V |
| Maximum Emitter-Base Voltage |Veb| | 9 V |
| Maximum Collector Current |Ic max| | 0.4 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 5 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 15 |
| Noise Figure, dB | - |
| Package | TO92T |
| UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage | V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B TO-92 B C E Tape Box MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K |