13001-0 bipolar transistor — Specifications & Equivalents

About the 13001-0

The 13001-0 is an NPN bipolar transistor with a collector–emitter voltage (V_CEO) rating of 400 V, a continuous collector current (I_C) of 0.4 A and a DC current gain (h_FE) of minimum 15. It can dissipate up to 0.8 W and is rated to a junction temperature of 150 °C. It is supplied in the TO92T package.

At a glance

• Type: NPN bipolar transistor
• Max collector–emitter voltage (V_CEO): 400 V
• Max collector current (I_C): 0.4 A
• DC current gain (h_FE): minimum 15
• Transition frequency (f_T): 5 MHz
• Power dissipation (P_D): 0.8 W
• Max junction temperature (T_J): 150 °C
• Package: TO92T

Typical applications

Judging from its ratings the 13001-0 is generally applied in small-signal amplification and general-purpose switching and high-voltage switching such as offline converters and lamp drivers.

A transition frequency (f_T) of 5 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of minimum 15 determines the base drive needed: divide your target collector current by the minimum h_FE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are V_CEO 400 V, V_CBO 700 V and V_EBO 9 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 0.8 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 13001-0

A drop-in substitute for the 13001-0 must be the same NPN type and offer a collector–emitter rating of at least 400 V, a collector current rating of at least 0.4 A, current gain in the same ballpark as minimum 15 and a transition frequency of at least 5 MHz for the same bandwidth.

Mechanically, check the replacement against the TO92T footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 13001-0?

The 13001-0 is an NPN bipolar junction transistor (BJT). It is rated for 400 V collector-emitter and 0.4 A continuous collector current.

What is the maximum voltage of the 13001-0?

Maximum collector-emitter voltage (Vceo) is 400 V, and collector-base (Vcbo) is 700 V.

How much current can the 13001-0 handle?

Continuous collector current is rated at 0.4 A, with dissipation limited to 0.8 W.

What is the hFE of the 13001-0?

DC current gain (hFE) is quoted as minimum 15. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 13001-0 come in?

It is listed in TO92T. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 13001-0?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.