WPT2N41 bipolar transistor — Specifications & Equivalents
About the WPT2N41
The WPT2N41 is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 32 V, a continuous collector current (IC) of 3 A and a DC current gain (hFE) of minimum 100. It can dissipate up to 3 W and is rated to a junction temperature of 150 °C. It is supplied in the PDFN3X2-8L package.
At a glance
- Type: PNP bipolar transistor
- Max collector–emitter voltage (VCEO): 32 V
- Max collector current (IC): 3 A
- DC current gain (hFE): minimum 100
- Power dissipation (PD): 3 W
- Max junction temperature (TJ): 150 °C
- Package: PDFN3X2-8L
Typical applications
The quoted current gain of minimum 100 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 32 V, VCBO 45 V and VEBO 6 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 3 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the WPT2N41
A drop-in substitute for the WPT2N41 must be the same PNP type and offer a collector–emitter rating of at least 32 V, a collector current rating of at least 3 A and current gain in the same ballpark as minimum 100.
Mechanically, check the replacement against the PDFN3X2-8L footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the WPT2N41?
The WPT2N41 is a PNP bipolar junction transistor (BJT). It is rated for 32 V collector-emitter and 3 A continuous collector current.
What is the maximum voltage of the WPT2N41?
Maximum collector-emitter voltage (Vceo) is 32 V, and collector-base (Vcbo) is 45 V.
How much current can the WPT2N41 handle?
Continuous collector current is rated at 3 A, with dissipation limited to 3 W.
What is the hFE of the WPT2N41?
DC current gain (hFE) is quoted as minimum 100. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the WPT2N41 come in?
It is listed in PDFN3X2-8L. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the WPT2N41?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 3 W |
| Maximum Collector-Base Voltage |Vcb| | 45 V |
| Maximum Collector-Emitter Voltage |Vce| | 32 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 100 |
| Noise Figure, dB | - |
| Package | PDFN3X2-8L |
| WPT2N41 WPT2N41 Single, PNP, -30V, -3A, Power Transistor Http | // Descriptions The WPT2N41 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and power management. Standard Product WPT2N41 is Pb-free. Pin configuration (Top view) Features Ultra low collector-to-emitter saturation volta |
| WPT2N32 WPT2N32 Single, PNP, -30V, -1A, Power Transistor with Http// | 20V N-MOSFET Descriptions The WPT2N32 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. DFN2x2-6L Standard Product WPT2N32 is Pb-free. C 6 1 E C B G 5 2 DFeatures D3 S 4 Ultra low collec |