WPT2E33 bipolar transistor — Specifications & Equivalents
About the WPT2E33
The WPT2E33 is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 30 V, a continuous collector current (IC) of 3 A and a DC current gain (hFE) of minimum 100. It can dissipate up to 3 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT89-3L package.
At a glance
- Type: PNP bipolar transistor
- Max collector–emitter voltage (VCEO): 30 V
- Max collector current (IC): 3 A
- DC current gain (hFE): minimum 100
- Power dissipation (PD): 3 W
- Max junction temperature (TJ): 150 °C
- Package: SOT89-3L
Typical applications
The quoted current gain of minimum 100 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 30 V, VCBO 30 V and VEBO 6 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 3 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the WPT2E33
A drop-in substitute for the WPT2E33 must be the same PNP type and offer a collector–emitter rating of at least 30 V, a collector current rating of at least 3 A and current gain in the same ballpark as minimum 100.
Mechanically, check the replacement against the SOT89-3L footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the WPT2E33?
The WPT2E33 is a PNP bipolar junction transistor (BJT). It is rated for 30 V collector-emitter and 3 A continuous collector current.
What is the maximum voltage of the WPT2E33?
Maximum collector-emitter voltage (Vceo) is 30 V, and collector-base (Vcbo) is 30 V.
How much current can the WPT2E33 handle?
Continuous collector current is rated at 3 A, with dissipation limited to 3 W.
What is the hFE of the WPT2E33?
DC current gain (hFE) is quoted as minimum 100. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the WPT2E33 come in?
It is listed in SOT89-3L. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the WPT2E33?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 3 W |
| Maximum Collector-Base Voltage |Vcb| | 30 V |
| Maximum Collector-Emitter Voltage |Vce| | 30 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 100 |
| Noise Figure, dB | - |
| Package | SOT89-3L |
| WPT2E33 WPT2E33Single, PNP, -30V, -3A, Power Transistor Http// | DescriptionsThe WPT2E33 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and other power management. Standard Product WPT2E33 is Pb-free. SOT-89-3L C 4 Features1 2 3B C E Pin configuration (Top view) Ultra low coll |