WPT2E33 Transistor — Specifications & Equivalents
WPT2E33 Transistor Datasheet pdf, WPT2E33 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 3 W |
| Maximum Collector-Base Voltage |Vcb| | 30 V |
| Maximum Collector-Emitter Voltage |Vce| | 30 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 100 |
| Noise Figure, dB | - |
| Package | SOT89-3L |
| WPT2E33 WPT2E33Single, PNP, -30V, -3A, Power Transistor Http// | DescriptionsThe WPT2E33 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and other power management. Standard Product WPT2E33 is Pb-free. SOT-89-3L C 4 Features1 2 3B C E Pin configuration (Top view) Ultra low coll |