TJ60S04M3L MOSFET — Specifications & Equivalents
About the TJ60S04M3L
The TJ60S04M3L is a MOSFET with a drain–source voltage (VDS) rating of 40 V and a continuous drain current (ID) of 60 A. It can dissipate up to 90 W and is rated to a junction temperature of 175 °C. It is supplied in the DPAK package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 40 V
- Max continuous drain current (ID): 60 A
- Power dissipation (PD): 90 W
- Max junction temperature (TJ): 175 °C
- Package: DPAK
Typical applications
With its 40 V drain–source rating the TJ60S04M3L sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The 60 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
Gate drive and switching notes
Keep gate–source voltage within the ±10 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 780 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the TJ60S04M3L
A drop-in substitute for the TJ60S04M3L should match its polarity and offer a drain–source rating of at least 40 V and a continuous drain current rating of at least 60 A.
Mechanically, check the replacement against the DPAK footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the TJ60S04M3L?
The TJ60S04M3L is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 40 V drain-source and 60 A continuous drain current.
What is the maximum voltage of the TJ60S04M3L?
The TJ60S04M3L has a maximum drain-source voltage (Vds) of 40 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the TJ60S04M3L handle?
It is rated for 60 A of continuous drain current, with power dissipation limited to 90 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the TJ60S04M3L come in?
It is listed in DPAK. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the TJ60S04M3L?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 90 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 40 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 10 V |
| |Id| ⓘ - Maximum Drain Current | 60 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 780 pF |
| Package | DPAK |
| TJ60S04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ60S04M3LTJ60S04M3LTJ60S04M3LTJ60S04M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance | RDS(ON) = 4.8 m (typ.) (VGS = -10 V)(2) Low leakage current |
| TJ60S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ60S06M3LTJ60S06M3LTJ60S06M3LTJ60S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance | RDS(ON) = 8.6 m (typ.) (VGS = -10 V)(2) Low leakage current |