Question 1

What is TJ60S04M3L?

Accepted Answer

TJ60S04M3L Transistor Datasheet, TJ60S04M3L Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of TJ60S04M3L?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 90 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V, |Id| ⓘ - Maximum Drain Current: 60 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 780 pF, Package: DPAK, TJ60S04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ60S04M3LTJ60S04M3LTJ60S04M3LTJ60S04M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.8 m (typ.) (VGS = -10 V)(2) Low leakage current, TJ60S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ60S06M3LTJ60S06M3LTJ60S06M3LTJ60S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.6 m (typ.) (VGS = -10 V)(2) Low leakage current

Question 3

What are equivalent components to TJ60S04M3L?

Accepted Answer

Common equivalents include: TJ150F06M3L, TJ15P04M3, TJ15S06M3L, TJ20A10M3, TJ20S04M3L, TJ30S06M3L, TJ40S04M3L, TJ50S06M3L

TJ60S04M3L Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	90 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	40 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	10 V
\|Id\| ⓘ - Maximum Drain Current	60 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	780 pF
Package	DPAK
TJ60S04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ60S04M3LTJ60S04M3LTJ60S04M3LTJ60S04M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance	RDS(ON) = 4.8 m (typ.) (VGS = -10 V)(2) Low leakage current
TJ60S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ60S06M3LTJ60S06M3LTJ60S06M3LTJ60S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance	RDS(ON) = 8.6 m (typ.) (VGS = -10 V)(2) Low leakage current