TJ50S06M3L Transistor — Specifications & Equivalents

TJ50S06M3L Transistor Datasheet, TJ50S06M3L Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation90 W
|Vds|ⓘ - Maximum Drain-Source Voltage60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage10 V
|Id| ⓘ - Maximum Drain Current50 A
Tj ⓘ - Maximum Junction Temperature175 °C
Cossⓘ - Output Capacitance560 pF
PackageDPAK
TJ50S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ50S06M3LTJ50S06M3LTJ50S06M3LTJ50S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceRDS(ON) = 10.3 m (typ.) (VGS = -10 V)(2) Low leakage curren

Equivalent & Replacement Parts

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