TJ20S04M3L Transistor — Specifications & Equivalents
TJ20S04M3L Transistor Datasheet, TJ20S04M3L Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 41 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 40 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 10 V |
| |Id| ⓘ - Maximum Drain Current | 20 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 250 pF |
| Package | DPAK |
| TJ20S04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ20S04M3LTJ20S04M3LTJ20S04M3LTJ20S04M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance | RDS(ON) = 17 m (typ.) (VGS = -10 V)(2) Low leakage current: |
Equivalent & Replacement Parts
- SSM6P49NU
- SSM6P54TU
- TJ10S04M3L
- TJ11A10M3
- TJ150F06M3L
- TJ15P04M3
- TJ15S06M3L
- TJ20A10M3
- 2N60
- TJ30S06M3L
- TJ40S04M3L
- TJ50S06M3L
- TJ60S04M3L
- TJ60S06M3L
- TJ70A06J3
- TJ80S04M3L
- TJ8S06M3L