RU190N08 Transistor — Specifications & Equivalents
RU190N08 Transistor Datasheet, RU190N08 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 30 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 80 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 25 V |
| |Id| ⓘ - Maximum Drain Current | 75 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 1100 pF |
| Package | TO220F |
Equivalent & Replacement Parts
- HY1906P
- HY1906B
- IRFP640
- MMD70R900P
- N6004NZ
- PHP45N03LTA
- PHB45N03LTA
- PHD45N03LTA
- 7N60
- RU190N08Q
- RU190N08R
- RU190N08S
- MDA0531EURH
- MDC0531EURH
- MDCA0418EURH
- MDD1051RH
- MDD14N25CRH