PHD45N03LTA MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by NXP (formerly Philips)
About the PHD45N03LTA
The PHD45N03LTA is a MOSFET with a drain–source voltage (VDS) rating of 25 V and a continuous drain current (ID) of 40 A. It can dissipate up to 65 W and is rated to a junction temperature of 175 °C. It is supplied in the DPAK package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 25 V
- Max continuous drain current (ID): 40 A
- Power dissipation (PD): 65 W
- Max junction temperature (TJ): 175 °C
- Package: DPAK
- Manufacturer: Commonly produced by NXP (formerly Philips)
Typical applications
With its 25 V drain–source rating the PHD45N03LTA sits in the very-low-voltage class of switching MOSFETs, typically found in battery protection and power-path switching, point-of-load converters and logic-level load switching in portable devices.
Gate drive and switching notes
Keep gate–source voltage within the ±15 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 290 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the PHD45N03LTA
A drop-in substitute for the PHD45N03LTA should match its polarity and offer a drain–source rating of at least 25 V and a continuous drain current rating of at least 40 A.
Mechanically, check the replacement against the DPAK footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the PHD45N03LTA?
The PHD45N03LTA is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 25 V drain-source and 40 A continuous drain current.
What is the maximum voltage of the PHD45N03LTA?
The PHD45N03LTA has a maximum drain-source voltage (Vds) of 25 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the PHD45N03LTA handle?
It is rated for 40 A of continuous drain current, with power dissipation limited to 65 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the PHD45N03LTA come in?
It is listed in DPAK. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the PHD45N03LTA?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 65 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 25 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 15 V |
| |Id| ⓘ - Maximum Drain Current | 40 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 290 pF |
| Package | DPAK |
| PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability | PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance |
Equivalent & Replacement Parts
- CEB603AL
- HY1906P
- HY1906B
- IRFP640
- MMD70R900P
- N6004NZ
- PHP45N03LTA
- PHB45N03LTA
- IRFZ46N
- RU190N08
- RU190N08Q
- RU190N08R
- RU190N08S
- MDA0531EURH
- MDC0531EURH
- MDCA0418EURH
- MDD1051RH