HY1906P MOSFET — Specifications & Equivalents

About the HY1906P

The HY1906P is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 60 V, a continuous drain current (I_D) of 120 A and an on-resistance (R_DS(on)) of 0.0075 Ω. It can dissipate up to 188 W and is rated to a junction temperature of 175 °C. It is supplied in the TO-220FB package.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 60 V
• Max continuous drain current (I_D): 120 A
• On-resistance (R_DS(on)): 0.0075 Ω
• Gate threshold (V_GS(th)): 4 V
• Power dissipation (P_D): 188 W
• Max junction temperature (T_J): 175 °C
• Package: TO-220FB

Typical applications

With its 60 V drain–source rating the HY1906P sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.

The 120 A current rating puts it in high-current territory, where conduction loss (I² × R_DS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

The low 0.0075 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

With a gate threshold (V_GS(th)) of 4 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking V_GS to 10 V.

Keep gate–source voltage within the ±25 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Q_g) of 96 nC sets the drive current required: average gate current is roughly Q_g × switching frequency, so faster switching needs a stronger driver.

Switching behaviour is characterised by a rise time of 11 ns and an output capacitance (C_oss) of 876 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the HY1906P

A drop-in substitute for the HY1906P must be the same N-channel type and offer a drain–source rating of at least 60 V, a continuous drain current rating of at least 120 A, an on-resistance no higher than 0.0075 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the TO-220FB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the HY1906P?

The HY1906P is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 120 A continuous drain current.

What is the maximum voltage of the HY1906P?

The HY1906P has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the HY1906P handle?

It is rated for 120 A of continuous drain current, with power dissipation limited to 188 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the HY1906P?

On-resistance (Rds(on)) is 0.0075 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the HY1906P logic-level compatible?

No. The gate threshold is 4 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.

What package does the HY1906P come in?

It is listed in TO-220FB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the HY1906P?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.