Question 1

What is HY1906P?

Accepted Answer

MOSFET N -Channel - HY1906P

Question 2

What are the specifications of HY1906P?

Accepted Answer

Key specifications include: Type: MOSFET, Channel Type: N -Channel, Drain-Source Voltage (Vds): 60 V, Gate-Source Voltage (Vgs): 25 V, Gate Threshold Voltage (Vgsth): 4 V, Drain Current (Id): 120 A, Drain-Source On-Resistance (Rds): 0.0075, Total Gate Charge (Qg): 96 nC, Rise Time (tr): 11 nS, Output Capacitance (Coss): 876 pF, Junction Temperature (Tj): 175 °C, Package: TO-220FB, Power Dissipation (Pd): 188 W

Question 3

What are equivalent components to HY1906P?

Accepted Answer

See the component details for equivalent parts.

HY1906P MOSFET — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Type	MOSFET
Channel Type	N -Channel
Drain-Source Voltage (Vds)	60 V
Gate-Source Voltage (Vgs)	25 V
Gate Threshold Voltage (Vgsth)	4 V
Drain Current (Id)	120 A
Drain-Source On-Resistance (Rds)	0.0075
Total Gate Charge (Qg)	96 nC
Rise Time (tr)	11 nS
Output Capacitance (Coss)	876 pF
Junction Temperature (Tj)	175 °C
Package	TO-220FB
Power Dissipation (Pd)	188 W