PHP45N03LTA Transistor — Specifications & Equivalents
PHP45N03LTA Transistor Datasheet, PHP45N03LTA Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 65 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 25 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 15 V |
| |Id| ⓘ - Maximum Drain Current | 40 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 290 pF |
| Package | TO-220AB |
| PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability | PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance |
| PHP45N03LT; PHB45N03LT;PHD45N03LTN-channel TrenchMOS transistorRev. 06 05 October 2000 Product specification1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability | PHP45N03LT in SOT78 (TO-220AB)PHB45N03LT in SOT404 (D2-PAK)PHD45N03LT in SOT428 (D-PAK).2. Features Low on-state resistance |
Equivalent & Replacement Parts
- APM2030N
- CEP603AL
- CEB603AL
- HY1906P
- HY1906B
- IRFP640
- MMD70R900P
- N6004NZ
- 13N50
- PHB45N03LTA
- PHD45N03LTA
- RU190N08
- RU190N08Q
- RU190N08R
- RU190N08S
- MDA0531EURH
- MDC0531EURH