MMD70R900P Transistor — Specifications & Equivalents

MMD70R900P Transistor Datasheet, MMD70R900P Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation40 W
|Vds|ⓘ - Maximum Drain-Source Voltage700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current5 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance330 pF
PackageTO252
isc N-Channel MOSFET Transistor MMD70R900PRHFEATURESDrain CurrentI = 5A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Equivalent & Replacement Parts

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