Question 1

What is RFP30N06LE?

Accepted Answer

RFP30N06LE Transistor Datasheet, RFP30N06LE Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of RFP30N06LE?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 96 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V, |Id| ⓘ - Maximum Drain Current: 30 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 290 pF, Package: TO220AB, PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m: l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d

Question 3

What are equivalent components to RFP30N06LE?

Accepted Answer

Common equivalents include: RFP25N05L, RFP25N06, RFP2N08L, RFP2N10L, RFP2N20, RFP2N20L, RFP3055, RFP3055LE

RFP30N06LE Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	96 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	10 V
\|Id\| ⓘ - Maximum Drain Current	30 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	290 pF
Package	TO220AB
PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m	l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d