RFP40N10LE MOSFET — Specifications & Equivalents

MOSFET N -Channel - RFP40N10LE

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)100 V
Gate-Source Voltage (Vgs)10 V
Drain Current (Id)40 A
Drain-Source On-Resistance (Rds)0.04
Rise Time (tr)140 nS
Output Capacitance (Coss)500 pF
Junction Temperature (Tj)175 °C
PackageTO220AB
Power Dissipation (Pd)150 W

Equivalent & Replacement Parts

No verified equivalents are listed for RFP40N10LE yet.

Browse all electronic components