RFP3055LE MOSFET — Specifications & Equivalents

About the RFP3055LE

The RFP3055LE is a MOSFET with a drain–source voltage (VDS) rating of 60 V and a continuous drain current (ID) of 11 A. It can dissipate up to 38 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220AB package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 60 V
  • Max continuous drain current (ID): 11 A
  • Power dissipation (PD): 38 W
  • Max junction temperature (TJ): 175 °C
  • Package: TO220AB

Typical applications

With its 60 V drain–source rating the RFP3055LE sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.

Gate drive and switching notes

Keep gate–source voltage within the ±16 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 105 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the RFP3055LE

A drop-in substitute for the RFP3055LE should match its polarity and offer a drain–source rating of at least 60 V and a continuous drain current rating of at least 11 A.

Mechanically, check the replacement against the TO220AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the RFP3055LE?

The RFP3055LE is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 11 A continuous drain current.

What is the maximum voltage of the RFP3055LE?

The RFP3055LE has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the RFP3055LE handle?

It is rated for 11 A of continuous drain current, with power dissipation limited to 38 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the RFP3055LE come in?

It is listed in TO220AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the RFP3055LE?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation38 W
|Vds|ⓘ - Maximum Drain-Source Voltage60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage16 V
|Id| ⓘ - Maximum Drain Current11 A
Tj ⓘ - Maximum Junction Temperature175 °C
Cossⓘ - Output Capacitance105 pF
PackageTO220AB
PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8ml Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d

Equivalent & Replacement Parts

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