RFP3055 MOSFET — Specifications & Equivalents
About the RFP3055
The RFP3055 is a MOSFET with a drain–source voltage (VDS) rating of 60 V and a continuous drain current (ID) of 12 A. It can dissipate up to 53 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220AB package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 60 V
- Max continuous drain current (ID): 12 A
- Power dissipation (PD): 53 W
- Max junction temperature (TJ): 175 °C
- Package: TO220AB
Typical applications
With its 60 V drain–source rating the RFP3055 sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 100 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the RFP3055
A drop-in substitute for the RFP3055 should match its polarity and offer a drain–source rating of at least 60 V and a continuous drain current rating of at least 12 A.
Mechanically, check the replacement against the TO220AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the RFP3055?
The RFP3055 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 12 A continuous drain current.
What is the maximum voltage of the RFP3055?
The RFP3055 has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the RFP3055 handle?
It is rated for 12 A of continuous drain current, with power dissipation limited to 53 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the RFP3055 come in?
It is listed in TO220AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the RFP3055?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 53 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 12 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 100 pF |
| Package | TO220AB |
| PD - 97126IRFP3077PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.2.8m | l Hard Switched and High Frequency Circuitsmax. 3.3m:BenefitsGl Worldwide Best RDS(on) in TO-247ID (Silicon Limited)200A cl Improved Gate, Avalanche and Dynamic dV/d |
Equivalent & Replacement Parts
- RFP22N10
- RFP25N05
- RFP25N05L
- RFP25N06
- RFP2N08L
- RFP2N10L
- RFP2N20
- RFP2N20L
- P0903BDG
- RFP3055LE
- RFP30N06LE
- RFP30P05
- RFP30P06
- RFP40N10
- RFP40N10LE
- RFP45N06
- RFP45N06LE