Question 1

What is FDD6035AL?

Accepted Answer

FDD6035AL Transistor Datasheet, FDD6035AL Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of FDD6035AL?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 56 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 46 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 325 pF, Package: TO252, isc N-Channel MOSFET Transistor FDD6035ALFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Question 3

What are equivalent components to FDD6035AL?

Accepted Answer

Common equivalents include: 2SK3435-S, 2SK3435-Z, AM4410N, APM2014N, B3942, CEB51A3, CEP51A3, CS4145

FDD6035AL Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	56 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	30 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	46 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	325 pF
Package	TO252
isc N-Channel MOSFET Transistor FDD6035ALFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-	V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos