JCS4N65F MOSFET — Specifications & Equivalents
About the JCS4N65F
The JCS4N65F is a MOSFET with a drain–source voltage (VDS) rating of 650 V and a continuous drain current (ID) of 4 A. It can dissipate up to 33 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220MF package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 650 V
- Max continuous drain current (ID): 4 A
- Power dissipation (PD): 33 W
- Max junction temperature (TJ): 150 °C
- Package: TO220MF
Typical applications
With its 650 V drain–source rating the JCS4N65F sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 62 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the JCS4N65F
A drop-in substitute for the JCS4N65F should match its polarity and offer a drain–source rating of at least 650 V and a continuous drain current rating of at least 4 A.
Mechanically, check the replacement against the TO220MF footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the JCS4N65F?
The JCS4N65F is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 650 V drain-source and 4 A continuous drain current.
What is the maximum voltage of the JCS4N65F?
The JCS4N65F has a maximum drain-source voltage (Vds) of 650 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the JCS4N65F handle?
It is rated for 4 A of continuous drain current, with power dissipation limited to 33 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the JCS4N65F come in?
It is listed in TO220MF. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the JCS4N65F?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 33 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 650 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 4 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 62 pF |
| Package | TO220MF |