AM4410N Transistor — Specifications & Equivalents
AM4410N Transistor Datasheet, AM4410N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 3.1 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 30 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 13 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 412 pF |
| Package | SO8 |
| Analog Power AM4417PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features | rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)17 @ VGS = -10V -11.1 Low thermal impedance -6023 @ VGS = -4.5V -9.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM |
| Analog Power AM4415PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features | rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)8.4 @ VGS = -4.5V -16 Low thermal impedance -2010.4 @ VGS = -2.5V -14 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI |