GPT13N50 MOSFET — Specifications & Equivalents

About the GPT13N50

The GPT13N50 is a MOSFET with a drain–source voltage (VDS) rating of 500 V and a continuous drain current (ID) of 13 A. It can dissipate up to 193 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 500 V
  • Max continuous drain current (ID): 13 A
  • Power dissipation (PD): 193 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO220

Typical applications

With its 500 V drain–source rating the GPT13N50 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 180 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the GPT13N50

A drop-in substitute for the GPT13N50 should match its polarity and offer a drain–source rating of at least 500 V and a continuous drain current rating of at least 13 A.

Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the GPT13N50?

The GPT13N50 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 13 A continuous drain current.

What is the maximum voltage of the GPT13N50?

The GPT13N50 has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the GPT13N50 handle?

It is rated for 13 A of continuous drain current, with power dissipation limited to 193 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the GPT13N50 come in?

It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the GPT13N50?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation193 W
|Vds|ⓘ - Maximum Drain-Source Voltage500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current13 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance180 pF
PackageTO220

Equivalent & Replacement Parts

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