Question 1

What is MMIS60R580P?

Accepted Answer

MOSFET N -Channel - MMIS60R580P

Question 2

What are the specifications of MMIS60R580P?

Accepted Answer

Key specifications include: Type: MOSFET, Channel Type: N -Channel, Drain-Source Voltage (Vds): 600 V, Gate-Source Voltage (Vgs): 30 V, Gate Threshold Voltage (Vgsth): 4 V, Drain Current (Id): 8 A, Drain-Source On-Resistance (Rds): 0.53, Total Gate Charge (Qg): 18 nC, Rise Time (tr): 34 nS, Output Capacitance (Coss): 428 pF, Junction Temperature (Tj): 150 °C, Package: TO251VS, Power Dissipation (Pd): 70 W

Question 3

What are equivalent components to MMIS60R580P?

Accepted Answer

See the component details for equivalent parts.

MMIS60R580P MOSFET — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Type	MOSFET
Channel Type	N -Channel
Drain-Source Voltage (Vds)	600 V
Gate-Source Voltage (Vgs)	30 V
Gate Threshold Voltage (Vgsth)	4 V
Drain Current (Id)	8 A
Drain-Source On-Resistance (Rds)	0.53
Total Gate Charge (Qg)	18 nC
Rise Time (tr)	34 nS
Output Capacitance (Coss)	428 pF
Junction Temperature (Tj)	150 °C
Package	TO251VS
Power Dissipation (Pd)	70 W