MDF11N65B Transistor — Specifications & Equivalents
MDF11N65B Transistor Datasheet, MDF11N65B Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pdⓘ - Maximum Power Dissipation | 49.6 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 650 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage | 4 V |
| |Id|ⓘ - Maximum Drain Current | 12 A |
| Tjⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 180 pF |
| Package | TO220F |