Question 1

What is GA1A4M?

Accepted Answer

GA1A4M Transistor Datasheet pdf, GA1A4M Equivalent. Parameters and Characteristics

Question 2

What are the specifications of GA1A4M?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 0.15 W, Maximum Collector-Base Voltage |Vcb|: 60 V, Maximum Collector-Emitter Voltage |Vce|: 50 V, Maximum Emitter-Base Voltage |Veb|: 10 V, Maximum Collector Current |Ic max|: 0.1 A, Max. Operating Junction Temperature (Tj): 150 °C, Forward Current Transfer Ratio (hFE), MIN: 35, Noise Figure, dB: -, Package: SC70

Question 3

What are equivalent components to GA1A4M?

Accepted Answer

Common equivalents include: 2SC945-H, 2SC945-L, 2SD882-E, 2SD882-P, 2SD882-Q, 2SA200-O, 2SA200-Y, SBT42

GA1A4M Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	35
Noise Figure, dB	-
Package	SC70