Question 1

What is 2SA200-Y?

Accepted Answer

2SA200-Y Transistor Datasheet pdf, 2SA200-Y Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SA200-Y?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: PNP, Maximum Collector Power Dissipation (Pc): 0.625 W, Maximum Collector-Base Voltage |Vcb|: 60 V, Maximum Collector-Emitter Voltage |Vce|: 50 V, Maximum Emitter-Base Voltage |Veb|: 5 V, Maximum Collector Current |Ic max|: 0.5 A, Max. Operating Junction Temperature (Tj): 150 °C, Transition Frequency (ft): 200(typ) MHz, Collector Capacitance (Cc): 13 pF, Forward Current Transfer Ratio (hFE), MIN: 120, Noise Figure, dB: -, Package: TO92, 2SA2005TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(-160V, -1.5A)2SA2005 Features External dimensions (Units: mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = -160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SC5511.1.21., Power Transistors2SA2004Silicon PNP epitaxial planar typeUnit: mm4.60.2For power amplification 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV High-speed switching1.40.22.60.11.60.20.80.1 0.550.15

Question 3

What are equivalent components to 2SA200-Y?

Accepted Answer

Common equivalents include: 2SC3357-F, 2SC4226-R23, 2SC945-H, 2SC945-L, 2SD882-E, 2SD882-P, 2SD882-Q, 2SA200-O

2SA200-Y Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	PNP
Maximum Collector Power Dissipation (Pc)	0.625 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft)	200(typ) MHz
Collector Capacitance (Cc)	13 pF
Forward Current Transfer Ratio (hFE), MIN	120
Noise Figure, dB	-
Package	TO92
2SA2005TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(-160V, -1.5A)2SA2005 Features External dimensions (Units	mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = -160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SC5511.1.21.
Power Transistors2SA2004Silicon PNP epitaxial planar typeUnit	mm4.60.2For power amplification 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV High-speed switching1.40.22.60.11.60.20.80.1 0.550.15