2SD715 Transistor — Specifications & Equivalents
2SD715 Transistor Datasheet pdf, 2SD715 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 80 W |
| Maximum Collector-Base Voltage |Vcb| | 110 V |
| Maximum Collector-Emitter Voltage |Vce| | 110 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 7 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Forward Current Transfer Ratio (hFE), MIN | 18000 |
| Noise Figure, dB | - |
| Package | TOP3 |
| INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD715DESCRIPTIONHigh DC Current Gain | h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power am |
| UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1 | BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage |