Question 1

What is 2N7222?

Accepted Answer

2N7222 Transistor Datasheet, 2N7222 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7222?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 125 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 8 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 310 pF, Package: TO-254AA, PD - 91552CIRFN440JANTX2N7222UJANTXV2N7222UPOWER MOSFETREF: MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN440 0.85 8.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-, PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF: MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi

Question 3

What are equivalent components to 2N7222?

Accepted Answer

Common equivalents include: 2N7002X, 2N7081-220M-ISO, 2N7089, 2N7090, 2N7092, 2N7218U, 2N7219U, 2N7221U

2N7222 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	125 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	500 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	8 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	310 pF
Package	TO-254AA
PD - 91552CIRFN440JANTX2N7222UJANTXV2N7222UPOWER MOSFETREF	MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN440 0.85 8.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF	MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi