Question 1

What is 2N7227U?

Accepted Answer

2N7227U Transistor Datasheet, 2N7227U Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7227U?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 150 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 14 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 680 pF, Package: SMD-1, PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF: MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi, DTO-254G2N7227 400 Volt 0.315SJX2N7227*JV2N7227*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter 2N7227 UNITVDSS Drain-Source Voltage400VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C14IDCo, PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREF: MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si

Question 3

What are equivalent components to 2N7227U?

Accepted Answer

Common equivalents include: 2N7092, 2N7218U, 2N7219U, 2N7221U, 2N7222, 2N7222U, 2N7224U, 2N7225U

2N7227U Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	150 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	400 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	14 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	680 pF
Package	SMD-1
PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF	MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi
DTO-254G2N7227 400 Volt 0.315SJX2N7227JV2N7227TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings	TC = 25C unless otherwise specified.Symbol Parameter 2N7227 UNITVDSS Drain-Source Voltage400VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C14IDCo
PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREF	MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si