K2611 MOSFET — Specifications & Equivalents
About the K2611
The K2611 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 900 V, a continuous drain current (ID) of 11 A and an on-resistance (RDS(on)) of 1.1 Ω. It can dissipate up to 300 W and is rated to a junction temperature of 150 °C. It is supplied in the TO-247 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 900 V
- Max continuous drain current (ID): 11 A
- On-resistance (RDS(on)): 1.1 Ω
- Gate threshold (VGS(th)): 5 V
- Power dissipation (PD): 300 W
- Max junction temperature (TJ): 150 °C
- Package: TO-247
Typical applications
With its 900 V drain–source rating the K2611 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
On-resistance of 1.1 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
With a gate threshold (VGS(th)) of 5 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking VGS to 10 V.
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Total gate charge (Qg) of 72 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.
Switching behaviour is characterised by a rise time of 135 ns and an output capacitance (Coss) of 260 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the K2611
A drop-in substitute for the K2611 must be the same N-channel type and offer a drain–source rating of at least 900 V, a continuous drain current rating of at least 11 A, an on-resistance no higher than 1.1 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.
Mechanically, check the replacement against the TO-247 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the K2611?
The K2611 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 900 V drain-source and 11 A continuous drain current.
What is the maximum voltage of the K2611?
The K2611 has a maximum drain-source voltage (Vds) of 900 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the K2611 handle?
It is rated for 11 A of continuous drain current, with power dissipation limited to 300 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the K2611?
On-resistance (Rds(on)) is 1.1 Ω. Multiply by the square of your load current to estimate conduction loss.
Is the K2611 logic-level compatible?
No. The gate threshold is 5 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.
What package does the K2611 come in?
It is listed in TO-247. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the K2611?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 900 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Gate Threshold Voltage (Vgsth) | 5 V |
| Drain Current (Id) | 11 A |
| Drain-Source On-Resistance (Rds) | 1.1 |
| Total Gate Charge (Qg) | 72 nC |
| Rise Time (tr) | 135 nS |
| Output Capacitance (Coss) | 260 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO-247 |
| Power Dissipation (Pd) | 300 W |
Equivalent & Replacement Parts
No verified equivalents are listed for K2611 yet.