2N7222U MOSFET — Specifications & Equivalents

Manufacturer: Multi-source (JEDEC registered part number)

About the 2N7222U

The 2N7222U is a MOSFET with a drain–source voltage (VDS) rating of 500 V and a continuous drain current (ID) of 8 A. It can dissipate up to 125 W and is rated to a junction temperature of 150 °C. It is supplied in the SMD-1 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 500 V
  • Max continuous drain current (ID): 8 A
  • Power dissipation (PD): 125 W
  • Max junction temperature (TJ): 150 °C
  • Package: SMD-1
  • Manufacturer: Multi-source (JEDEC registered part number)

Typical applications

With its 500 V drain–source rating the 2N7222U sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 310 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 2N7222U

A drop-in substitute for the 2N7222U should match its polarity and offer a drain–source rating of at least 500 V and a continuous drain current rating of at least 8 A.

Mechanically, check the replacement against the SMD-1 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2N7222U is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2N7222U?

The 2N7222U is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 8 A continuous drain current.

What is the maximum voltage of the 2N7222U?

The 2N7222U has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 2N7222U handle?

It is rated for 8 A of continuous drain current, with power dissipation limited to 125 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 2N7222U come in?

It is listed in SMD-1. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2N7222U?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation125 W
|Vds|ⓘ - Maximum Drain-Source Voltage500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current8 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance310 pF
PackageSMD-1
PD - 91552CIRFN440JANTX2N7222UJANTXV2N7222UPOWER MOSFETREFMIL-PRF-19500/596SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN440 0.85 8.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREFMIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi

Equivalent & Replacement Parts

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